• DocumentCode
    1006343
  • Title

    Polarisation-dependent gain-current relationship in InGaAs/InGaAlAs/InAlAs SCH-MQW laser diodes

  • Author

    Wakita, Ken ; Kawamura, Yuriko ; Asahi, H.

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • Firstpage
    193
  • Lastpage
    194
  • Abstract
    The polarisation-dependent gain spectra were measured at ¿190 C for InGaAs InGaAlAs InAlAs SCH-MQW laser diodes. The peak gain for TE polarisation was much larger (>750 cm¿1) than that for TM polarisation, while the peak gain difference for InGaAs InAlAs DH lasers was as small as 15 cm¿1. This peak gain difference for SCH-MQW lasers is surprisingly larger than that for GaAs GaAlAs MQW lasers. This difference was explained by the polarisation-related selection rules for optical transition.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; polarisation; semiconductor junction lasers; III-V semiconductors; InGaAs/InGaAlAs/InAlAs; TE polarisation; TM polarisation; laser diodes; multi quantum well; optical transition; peak gain difference; polarisation-dependent gain spectra; polarisation-related selection rules; separate confinement heterostructure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850136
  • Filename
    4250956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006343