• DocumentCode
    1006623
  • Title

    1.43 μm InAs bilayer quantum dot lasers on GaAs substrate

  • Author

    Li, L.H. ; Rossetti, M. ; Fiore, A. ; Patriarche, G.

  • Author_Institution
    Ecole Polytechnique Fed. de Lausanne, Inst. of Photonics & Quantum Electron., Lausanne, Switzerland
  • Volume
    42
  • Issue
    11
  • fYear
    2006
  • fDate
    5/25/2006 12:00:00 AM
  • Firstpage
    638
  • Lastpage
    640
  • Abstract
    An edge emitting quantum dot (QD) laser at 1430 nm is demonstrated with a structure grown by molecular beam epitaxy on GaAs substrate. The active region is based on three InAs bilayer QDs embedded in a conventional AlGaAs/GaAs waveguide. The threshold current density is 134 A/cm2. Output power of 23 mW per facet is achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical waveguides; quantum dot lasers; semiconductor epitaxial layers; substrates; 1.43 micron; 23 mW; AlGaAs-GaAs; InAs; bilayer quantum dot lasers; edge emitting laser; molecular beam epitaxy; threshold current density; waveguide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/iel:20060918
  • Filename
    1648608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006623