DocumentCode
1006714
Title
20 GHz active mode-locking of a 1.55 μm InGaAsP laser
Author
Tucker, Rodney ; Korotky, Steven K. ; Eisenstein, Gadi ; Koren, U. ; Stulz, L.W. ; Veselka, J.J.
Author_Institution
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume
21
Issue
6
fYear
1985
Firstpage
239
Lastpage
240
Abstract
Active mode-locking of a 1.55 μm wavelength InGaAsP laser at repetition rates up to 20 GHz is reported. The pulsewidth is 5 ps at 20 GHz, with a peak pulse power of 18 mW coupled into a single-mode output fibre.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; semiconductor junction lasers; III-V semiconductors; InGaAsP laser; active mode-locking; peak pulse power; pulsewidth 5 ps; repetition rates 20 GHz; single-mode output fibre; wavelength 1.55 micron;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850171
Filename
4250992
Link To Document