• DocumentCode
    1006714
  • Title

    20 GHz active mode-locking of a 1.55 μm InGaAsP laser

  • Author

    Tucker, Rodney ; Korotky, Steven K. ; Eisenstein, Gadi ; Koren, U. ; Stulz, L.W. ; Veselka, J.J.

  • Author_Institution
    AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    21
  • Issue
    6
  • fYear
    1985
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    Active mode-locking of a 1.55 μm wavelength InGaAsP laser at repetition rates up to 20 GHz is reported. The pulsewidth is 5 ps at 20 GHz, with a peak pulse power of 18 mW coupled into a single-mode output fibre.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; semiconductor junction lasers; III-V semiconductors; InGaAsP laser; active mode-locking; peak pulse power; pulsewidth 5 ps; repetition rates 20 GHz; single-mode output fibre; wavelength 1.55 micron;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850171
  • Filename
    4250992