DocumentCode
1007218
Title
Planar MOCVD GaAlAs/GaAs high-frequency mixer diodes
Author
Christou, Alex ; Peckerar, M.C.
Author_Institution
Naval Research Laboratory, Washington, USA
Volume
21
Issue
7
fYear
1985
Firstpage
305
Lastpage
307
Abstract
Metallo-organic CVD Ga0.7Al0.3As/GaAs Schottky diodes were processed as planar mixer diodes and exhibited a low noise figure of 5.5 dB (single-sideband) at 36 GHz and 6.0 dB at 94 GHz. The diode capacitance was less than 0.05 pF and series resistance was measured to be 5 ¿ for the 94 GHz diodes.
Keywords
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gallium arsenide; mixers (circuits); solid-state microwave devices; vapour phase epitaxial growth; 36 GHz; 94 GHz; Ga0.7Al0.3As/GaAs Schottky diodes; MOCVD; diode capacitance; microwave devices; noise figure 5.5 dB; planar mixer diodes; series resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850218
Filename
4251040
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