• DocumentCode
    1007669
  • Title

    Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon

  • Author

    Alzanki, T. ; Gwilliam, R. ; Emerson, N. ; Sealy, B.J.

  • Author_Institution
    Sch. of Electron. & Phys. Sci., Univ. of Surrey, Guildford, UK
  • Volume
    40
  • Issue
    12
  • fYear
    2004
  • fDate
    6/10/2004 12:00:00 AM
  • Firstpage
    774
  • Lastpage
    775
  • Abstract
    Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm-2 in <100> silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.
  • Keywords
    Hall mobility; antimony; doping profiles; electron density; electron mobility; elemental semiconductors; p-n junctions; secondary ion mass spectra; silicon; Hall effect measurements; Sb implanted silicon; Si:Sb; atomic profiles; carrier profiles; electron concentration; mobility profiles; nanometer size resolution; secondary ion mass spectroscopy; ultra shallow junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040493
  • Filename
    1305497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1007669