DocumentCode
1008652
Title
GaAs FET as a light transducer
Author
Edwards, W.D.
Author_Institution
Communications Research Centre, Ottawa, Canada
Volume
21
Issue
9
fYear
1985
Firstpage
399
Lastpage
401
Abstract
Conditions are described in which a power GaAs FET is sensitive to and emits light at the same time. With He-Ne 6328 Ã… light stimulation and white-light emission a transducer ratio of 0.005 was measured. Both the sensitivity to light and the light emission are very nonuniform across the device. Although each is a measure of device nonuniformity, no correlation between the two methods of nonuniformity measurement was observed.
Keywords
III-V semiconductors; field effect transistors; gallium arsenide; luminescent devices; photodetectors; phototransistors; power transistors; sensitivity; GaAs FET; He-Ne 6328 angstroms light stimulation; III-V semiconductors; device nonuniformity; light transducer; luminescent devices; power transistors; white-light emission;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850284
Filename
4251185
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