• DocumentCode
    1009037
  • Title

    Selectively implanted oxygen isolation technology (SIO)

  • Author

    Ratnam, P. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    21
  • Issue
    10
  • fYear
    1985
  • Firstpage
    448
  • Lastpage
    449
  • Abstract
    A new isolation technology using selectively implanted oxygen into silicon is presented. The technique offers a five-fold reduction in the bird´s beak as compared to the standard LOCOS process. Good interface characteristics are observed for the implanted oxide as well as for the active oxide grown between the implanted oxide regions. Electrical characteristics of n+/p diodes isolated by the implanted oxide are found to be comparable to that of LOCOS diodes.
  • Keywords
    VLSI; integrated circuit technology; active oxide; bird´s beak; implanted oxide; interface characteristics; isolation technology; n+/p diodes; selectively implanted oxygen;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850319
  • Filename
    4251224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009037