• DocumentCode
    1009075
  • Title

    New ν(E) relationship for GaAs

  • Author

    Feng, Y.-K.

  • Author_Institution
    Technische Universitÿt Hamburg-Harburg, Arbeitsbereich Hochfrequenztechnik, Hamburg, West Germany
  • Volume
    21
  • Issue
    10
  • fYear
    1985
  • Firstpage
    453
  • Lastpage
    454
  • Abstract
    A new ν(E) relationship of GaAs has been developed, in which the nonequilibrium transport effects (or velocity overshoot effects) of electrons were included. It was observed that the peak electric field Ep, corresponding to the average peak electron velocity νp, and the saturation electron velocity νs increase with shortening of the length of GaAs devices, and that Ep decreases slightly with the decrease of the lattice temperature To.
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; high field effects; GaAs; average peak electron velocity; lattice temperature; nonequilibrium transport effects; peak electric field; saturation electron velocity; velocity overshoot effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850323
  • Filename
    4251229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009075