In(Al)GaAs–AlGaAs Wafer Fused VCSELs Emitting at 2- μm Wavelength

Author

Mereuta, Alexandru ; Iakovlev, Vladimir ; Caliman, Andrei ; Syrbu, Alexei ; Royo, Paul ; Rudra, Alok ; Kapon, Eli

Author_Institution

Ecole Polytech. Fed. de Lausanne, Lausanne

Volume

20

Issue

1

fYear

2008

Firstpage

24

Lastpage

26

Abstract

We demonstrate 2-mum wavelength, wafer-fused In(Al)GaAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room temperature with a threshold current of 4 mA and sidemode suppression ratio of over 30 dB. These devices can be continuously tuned with current by 5 nm without mode hopping, with a tuning rate of 0.31 nm/mA. These features demonstrate the potential of these long wavelength VCSELs for gas sensing and other optical spectroscopy applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gas sensors; indium compounds; semiconductor lasers; surface emitting lasers; wafer bonding; In(Al)GaAs-AlGaAs wafer; InAlGaAs-AlGaAs; VCSEL; current 4 mA; gas sensing; power 0.5 mW; temperature 293 K to 298 K; vertical-cavity surface-emitting lasers; wafer bonding; wavelength 2 mum; Laser modes; Laser tuning; Optical surface waves; Optical tuning; Power lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers; Gas sensing; vertical surface-emitting laser; wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.910757

Filename

4402983