• DocumentCode
    1009186
  • Title

    20 GHz bandwidth InGaAs photodetector for long-wavelength microwave optical links

  • Author

    Schlafer, J. ; Su, C.B. ; Powazinik, W. ; Lauer, R.B.

  • Author_Institution
    GTE Laboratories Inc., Waltham, USA
  • Volume
    21
  • Issue
    11
  • fYear
    1985
  • Firstpage
    469
  • Lastpage
    471
  • Abstract
    InGaAs photodetectors have been fabricated having a packaged RC plus transit-time-limited bandwidth of 20 GHz and a fibre-coupled responsivity of 0.55 A/W. Using a directly modulated InGaAsP diode laser, the photodetector optical frequency response was measured 3 dB flat to 17 GHz, the bandwidth limit of the laser.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; 20 GHz bandwidth; III-V semiconductors; InGaAr/InP mesa structure; InGaAs photodetector; directly modulated InGaAsP diode laser; long-wavelength microwave optical links; microwave signal processing; optical communication equipment; optical frequency response; packaged RC; photodiodes; transit-time-limited bandwidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850333
  • Filename
    4251243