DocumentCode
1009443
Title
Nb metallurgical transformations occurring in the microbridge area of an rf SQUID during its critical current adjustment
Author
Monfort, Y. ; Bloyet, D. ; Villegier, J.C. ; Duret, D.
Author_Institution
I.S.M.Ra, Université de Caen, CAEN Cedex, France
Volume
21
Issue
2
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
866
Lastpage
869
Abstract
We describe the metallurgical transformations of Nb thin-film Dayem microbridges related to the adjustment of their critical current at operating temperature (4.2 K). The critical current is reduced to a few tens of microamperes when the microbridge is submitted to proper current pulses. Subsequent Transmission Electron Microscopy (TEM) observations show an increase of the mean Nb grain size in the microbridge area. Nb contamination by the silicon substrate is also observed, Both critical temperature and critical current decreases are attributed to these pnenomena.
Keywords
Josephson devices; Contamination; Critical current; Grain size; Niobium; SQUIDs; Silicon; Substrates; Temperature; Transistors; Transmission electron microscopy;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1063747
Filename
1063747
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