DocumentCode
1009880
Title
Simplified analysis of body-contact effect for MOSFET/SOI
Author
Omura, Yasuhisa ; Izumi, Katsutoshi
Author_Institution
LSI Lab., NTT, Kanagawa, Japan
Volume
35
Issue
8
fYear
1988
fDate
8/1/1988 12:00:00 AM
Firstpage
1391
Lastpage
1393
Abstract
A simplified experimental analysis of the body-contact effect and its impact on drain current reduction is carried out to clarify the relevant parameters for MOSFET/SOI design. In the experiments, body contacts in the source are distributed in a mosaic configuration. The empirical relationship between drain current and the number of body contacts is obtained. The relationship suggests that there must be a sufficient number of body contacts to suppress the kink effect to avoid reduction in drain current
Keywords
field effect integrated circuits; insulated gate field effect transistors; MOSFET/SOI; Si; body-contact effect; drain current reduction; mosaic configuration; Aluminum; Annealing; Atomic layer deposition; Bipolar transistors; Boron; Impurities; Large scale integration; MOSFET circuits; Semiconductor films; Silicon on insulator technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2567
Filename
2567
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