• DocumentCode
    1010030
  • Title

    p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET

  • Author

    Matsumoto, Kaname ; Ogura, M. ; Wada, Tomotaka ; Yao, Tingfeng ; Hayashi, Yasuhiro ; Hashizume, Nobuya ; Kato, Masaaki ; Endo, T. ; Inage, H.

  • Author_Institution
    Electrotechnical Laboratory, Tsukuba, Japan
  • Volume
    21
  • Issue
    13
  • fYear
    1985
  • Firstpage
    580
  • Lastpage
    581
  • Abstract
    The first p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET having a p+-GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FET fabricated shows a transconductance of gm=30 mS/mm, a drain conductance of gd=2.5 mS/mm and a threshold voltage of Vth=+0.2 V at 77 K in the dark.
  • Keywords
    III-V semiconductors; gallium arsenide; insulated gate field effect transistors; GaAs; III-V semiconductors; SIS FET; p+-GaAs/undoped GaAlAs/undoped GaAs structure; p-channel; semiconductor-insulator-semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850410
  • Filename
    4251342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1010030