DocumentCode
1010534
Title
Comment: Effect of magnetic field on n+nn+ GaAs ballistic diode
Author
Van Zeghbroeck, B.J.
Author_Institution
IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
Volume
21
Issue
19
fYear
1985
Firstpage
848
Keywords
III-V semiconductors; electric impedance; gallium arsenide; semiconductor diodes; AC impedance; GaAs n+-n-n+ ballistic diode; admittance; equation of motion; magnetic field; momentum relaxation term;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850597
Filename
4251399
Link To Document