• DocumentCode
    1011200
  • Title

    Polishing damages to electrical properties of BLT thin-film capacitors fabricated by damascene process

  • Author

    Kim, N.-H. ; Jung, P.-G. ; Shin, Soo-Hwan ; Kim, Jung-Ho ; Lee, H.-Y. ; Lee, Woo-sang

  • Author_Institution
    Res. Inst. for Catalysis, Chonnam Nat. Univ., Gwangju
  • Volume
    44
  • Issue
    24
  • fYear
    2008
  • Firstpage
    1429
  • Lastpage
    1430
  • Abstract
    Polishing pressure in the damascene process for BLT thin films improves the removal rate and surface roughness; however, the electrical properties of BLT capacitors fabricated by the damascene process with high pressure worsened. Therefore, low pressure was suitable for BLT capacitors fabricated by the damascene process when considering the electrical properties.
  • Keywords
    bismuth compounds; chemical mechanical polishing; lanthanum compounds; surface roughness; thin film capacitors; (BiLa)Ti3O12; damascene process; polishing damages; surface roughness; thin-film capacitors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20082036
  • Filename
    4689501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011200