High-temperature operation of InGaAs/InGaAsP compressive-strained QW lasers with low threshold currents

Author

Nobuhara, Hiroyuki ; Tanaka, Kazuhiro ; Yamamoto, Tsuyoshi ; Machida, Toyotoshi ; Fujii, Takuya ; Wakao, Kiyohide

Author_Institution

Optical Devices Lab., Fujitsu Labs. Ltd., Atsugi, Japan

Volume

5

Issue

9

fYear

1993

Firstpage

961

Lastpage

962

Abstract

We investigated the influence of the band gap wavelength of barrier layers and separate confinement heterostructure (SCH) layers lambda /sub SCH/ on the high-temperature operation of InGaAs/InGaAsP compressive-strained quantum-well (QW) lasers. The optimum lambda /sub SCH/ was 1.2 mu m, at which carriers were sufficiently confined into quantum wells. The QW laser with lambda /sub SCH/ = 1.2 mu m exhibited low threshold currents of 2.3 mA at 20 degrees C and 9.7 mA at 100 degrees C and CW lasing up to 150 degrees C.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.2 mum; 100 degC; 150 degC; 2.3 mA; 20 degC; 9.7 mA; CW lasing; InGaAs-InGaAsP; InGaAs/InGaAsP; QW lasers; SCH layer; band gap wavelength; barrier layers; compressive-strained; high-temperature operation; low threshold currents; quantum-well; separate confinement heterostructure; Carrier confinement; Diode lasers; Indium gallium arsenide; Optical devices; Optical transmitters; Photonic band gap; Potential well; Quantum well lasers; Temperature dependence; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257158

Filename

257158