• DocumentCode
    1012062
  • Title

    The "Thyristor"—A new high-speed switching transistor

  • Author

    Mueller, C.W. ; Hilibrand, J.

  • Author_Institution
    RCA Laboratories, Princeton, N. J.
  • Volume
    5
  • Issue
    1
  • fYear
    1958
  • Firstpage
    2
  • Lastpage
    5
  • Abstract
    A description is given of the construction and characteristics of a versatile and novel semiconductor device, called a "Thyristor," that may be operated as a bistable element switching to a high conductivity mode or as a more conventional high-frequency transistor, either in switching or amplifying circuitry. The Thyristor has thyratron-like characteristics that closely approach those of an ideal switch. However, the Thyristor, unlike the thyratron, can be turned off readily by the control element. The open-state current is about 2 microamperes and the closed-state voltage drop is 0.3 to 0.5 volt. The unit can be switched into the high conductance mode in less than 0.1 microsecond with a pulse energy of 10-4ergs. It can be turned off with a pulse energy of about 10-1ergs in times of the order of 0.1 microsecond. The bistable operation depends upon a new type of semiconductor contact that collects holes at low current densities and injects electrons at high current densities. The electron alpha of the injector increases as a power law function of current and greatly aids in obtaining device reproducibility. These injector properties can be described in terms of a tunneling mechanism.
  • Keywords
    Charge carrier processes; Conductivity; Current density; Electrons; Semiconductor devices; Switches; Switching circuits; Thyratrons; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1958.14318
  • Filename
    1472361