• DocumentCode
    1012066
  • Title

    MOSFET degradation due to hot-carrier effect at high frequencies

  • Author

    Subrahmaniam, Rathnam ; Chen, John Y. ; Johnston, Allan H.

  • Author_Institution
    Boeing Aerosp. & Electron., Seattle, WA, USA
  • Volume
    11
  • Issue
    1
  • fYear
    1990
  • Firstpage
    21
  • Lastpage
    23
  • Abstract
    Hot-carrier-induced degradation due to AC stress on short-channel MOSFETs is discussed. It is observed that pulsed gate voltage stressing with a short falltime (0.7 ns) can cause additional lifetime degradation in the form of drain-current reduction. The AC-enhanced degradation is more pronounced at higher frequencies.<>
  • Keywords
    high-frequency effects; hot carriers; insulated gate field effect transistors; semiconductor device testing; 0.7 ns; AC stress; drain-current reduction; high frequencies; hot-carrier-induced degradation; lifetime degradation; pulsed gate voltage stressing; short falltime; short-channel MOSFETs; Degradation; Frequency measurement; Hot carrier effects; Hot carriers; MOSFET circuits; Packaging; Pulse generation; Stress measurement; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.46918
  • Filename
    46918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1012066