• DocumentCode
    1012075
  • Title

    Extremely uniform threshold voltage distribution of GaAs FET made on LEC-grown crystals

  • Author

    Kasahara, J. ; Arai, Manabu ; Watanabe, N.

  • Author_Institution
    Sony Corporation, Research Center, Yokohama, Japan
  • Volume
    21
  • Issue
    22
  • fYear
    1985
  • Firstpage
    1040
  • Lastpage
    1042
  • Abstract
    Extremely uniform threshold voltage distribution of a GaAs FET with a standard deviation of 7 mV in a 20 mm × 20 mm area of In-doped low-dislocation-density LEC-grown substrates was obtained after excluding several extraordinary data points. The deviation of the threshold voltage at the extraordinary data points was as large as 100¿150 mV. No significant correlation of the extraordinary threshold voltage with distance of the gate to a nearest dislocation was observed.
  • Keywords
    III-V semiconductors; crystal growth from melt; field effect transistors; gallium arsenide; substrates; GaAs FET; III-V semiconductors; In dopant; LEC-grown crystals; liquid encapsulated Czochralski method; low-dislocation density; transistors; uniform threshold voltage distribution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850738
  • Filename
    4251573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1012075