Three-terminal P-N-P-N transistor switches

An investigation of the electrical properties of four-region silicon structures, with electrical contact made to both outer regions and to one of the inner base regions is described briefly. A satisfactory analytical understanding of the device has been achieved, but for simplicity the experimental results presented are discussed in nonmathematical and purely physical terms. The fuller theoretical discussion is being prepared for submission to the PROCEEDINGS OF THE IRE. In many respects, the behavior of this three-terminal device is found to be similar to the conventional thyratron.