High single-mode power conversion efficiency vertical-cavity top-surface-emitting lasers

Author

Lear, K.L. ; Chalmers, S.A.

Author_Institution

Photonics Res. Dept., Sandia Nat. Labs., Albuquerque, NM, USA

Volume

5

Issue

9

fYear

1993

Firstpage

972

Lastpage

975

Abstract

We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In/sub 0.2/Ga/sub 0.8/As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; semiconductor lasers; 12.7 percent; In/sub 0.2/Ga/sub 0.8/As; continuous-wave single-mode operation; deep proton implants; delta-doped contact layer; device operation; epitaxial structure included low resistance; gain-guided lasers; high single-mode power conversion efficiency; molecular beam epitaxial layers; p-type mirrors; piecewise linearly graded n-type mirrors; quantum-well active region; vertical-cavity top-surface-emitting lasers; wall-plug efficiency; Contact resistance; Electrical resistance measurement; Implants; Mirrors; Molecular beam epitaxial growth; Power conversion; Power lasers; Protons; Quantum well lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257162

Filename

257162