• DocumentCode
    1012094
  • Title

    Germanium power switching devices

  • Author

    Philips, J. ; Chang, H.C.

  • Author_Institution
    Westinghouse Electric Corp., Pittsburgh, Pa.
  • Volume
    5
  • Issue
    1
  • fYear
    1958
  • Firstpage
    13
  • Lastpage
    18
  • Abstract
    Two-terminal and three-terminal germanium power switching devices have been developed, utilizing a metal semiconductor contact as an electron injector in a multijunction device. The principles of operation, fabrication techniques, and electrical characteristics of this new device are discussed. Devices capable of switching up to 25 amperes and blocking up to 350 volts have been fabricated and applied to power control circuits. The low impedance voltage drop is of the order of 0.5 volt and the dynamic resistance is a few hundredths of an ohm. A switch-on time less than 0.1 microsecond has been measured with a switch-off time of the order of microseconds.
  • Keywords
    Contacts; Electric variables; Electrons; Fabrication; Germanium; Impedance; Low voltage; Power control; Power semiconductor switches; Switching circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1958.14321
  • Filename
    1472364