DocumentCode
1012094
Title
Germanium power switching devices
Author
Philips, J. ; Chang, H.C.
Author_Institution
Westinghouse Electric Corp., Pittsburgh, Pa.
Volume
5
Issue
1
fYear
1958
Firstpage
13
Lastpage
18
Abstract
Two-terminal and three-terminal germanium power switching devices have been developed, utilizing a metal semiconductor contact as an electron injector in a multijunction device. The principles of operation, fabrication techniques, and electrical characteristics of this new device are discussed. Devices capable of switching up to 25 amperes and blocking up to 350 volts have been fabricated and applied to power control circuits. The low impedance voltage drop is of the order of 0.5 volt and the dynamic resistance is a few hundredths of an ohm. A switch-on time less than 0.1 microsecond has been measured with a switch-off time of the order of microseconds.
Keywords
Contacts; Electric variables; Electrons; Fabrication; Germanium; Impedance; Low voltage; Power control; Power semiconductor switches; Switching circuits;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1958.14321
Filename
1472364
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