• DocumentCode
    1012681
  • Title

    GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50 000

  • Author

    Cazarre, A. ; Tasselli, Josiane ; Marty, Alain ; Bailbe, J.P. ; Rey, Germain

  • Author_Institution
    Centre National de la Recherche Scientifique, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
  • Volume
    21
  • Issue
    24
  • fYear
    1985
  • Firstpage
    1124
  • Lastpage
    1126
  • Abstract
    A simple mesa GaAlAs/GaAs heterojunction bipolar phototransistor fabricated by LPE growth technique is presented. A high current gain of the order of 50 000 has been obtained and is believed to be the highest ever reported for a bipolar device. The corresponding high sensitivity is about 15 000 A/W for an 800 nm illumination wavelength.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; liquid phase epitaxial growth; phototransistors; semiconductor growth; GaAlAs/GaAs heterojunction bipolar phototransistors; LPE growth; current gain 50000; high sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850797
  • Filename
    4251649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1012681