The SINFET: a new high conductance, high switching speed MOS-gated transistor

A new MOS power semiconductor device with a very low on-resistance and a switching speed comparable to conventional n-channel power MOSFETs is described. The fabrication process is similar to that of an n-channel lateral DMOS transistor but with the conventional high-low `ohmic¿ drain contact replaced by a Schottky contact. In operation, the Schottky contact injects minority carriers to conductivity-modulate the n- drift region, thereby reducing the on-resistance by a factor of about ten compared with those of conventional n-channel power MOSFETs of comparable size and voltage capability. Furthermore, since only a small number of minority carriers are injected, the device speed is comparable to conventional n-channel power MOSFETs.