DocumentCode
1012765
Title
Polarisation changes in spontaneous emission from GaInAsP/InP two-dimensional photonic crystals
Author
Baba, T. ; Matsuzaki, T.
Volume
31
Issue
20
fYear
1995
fDate
9/28/1995 12:00:00 AM
Firstpage
1776
Lastpage
1778
Abstract
GaInAsP/InP strained quantum-well two-dimensional photonic crystals have been fabricated. The polarisation of photoluminescence radiating parallel to the substrate plane was changed from TE to TM when the photonic bandgap for TE-polarisation was designed to overlap with the emission energy. This is considered to be caused by the quantum confinement for photons and electrons
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; photoluminescence; photonic band gap; semiconductor quantum wells; spontaneous emission; GaInAsP-InP; GaInAsP/InP strained quantum-well; photoluminescence; photonic bandgap; polarisation; quantum confinement; spontaneous emission; two-dimensional photonic crystals;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951182
Filename
469248
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