DocumentCode
1012778
Title
Degradation mode in semiconductor optical modulators
Author
Yuda, M. ; Fukuda, M. ; Miyazawa, H.
Volume
31
Issue
20
fYear
1995
fDate
9/28/1995 12:00:00 AM
Firstpage
1778
Lastpage
1779
Abstract
A degradation mode in Mach-Zehnder semiconductor optical modulators with InGaAs/InAlAs MQWs is investigated. The main accelerating factors are the input optical power and the applied voltage in high stress tests. The main cause of degradation is found to be the destruction of the p-n junction on the side wall of the ridge waveguide. The time to failure is consequently expected to be >105 h under practical operating conditions in optical fibre transmission systems
Keywords
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; semiconductor quantum wells; 1E5 h; InGaAs-InAlAs; InGaAs/InAlAs MQWs; Mach-Zehnder semiconductor optical modulators; degradation mode; optical fibre transmission systems; p-n junction; ridge waveguide; side wall; time to failure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951227
Filename
469249
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