DocumentCode
1012820
Title
High-frequency transistors by the diffused-meltback process employing three impurities
Author
Lesk, I.A. ; Gonzales, R.E.
Author_Institution
General Electric Co., Syracuse, N. Y.
Volume
5
Issue
2
fYear
1958
fDate
4/1/1958 12:00:00 AM
Firstpage
117
Lastpage
117
Keywords
Circuit testing; Cutoff frequency; Fabrication; Gain measurement; Geometry; Germanium; Impurities; Performance gain; Power measurement; Production; Silicon; Switches; VHF circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1958.14394
Filename
1472437
Link To Document