• DocumentCode
    1013347
  • Title

    Perpendicular anisotropy in rare earth-transition metal amorphous films prepared by dual ion beam sputtering

  • Author

    Okamine, S. ; Ohta, N. ; Sugita, Y.

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1641
  • Lastpage
    1643
  • Abstract
    The effect of resputtering on perpendicular magnetic anisotropy has been investigated for amorphous Gd-Co, Gd-Fe, Tb-Co and Tb-Fe films using a dual ion beam sputtering system. In Tb-Co and Tb-Fe films, perpendicular anisotropy increases remarkably owing to resputtering, while in Gd-Co and Gd-Fe films, it changes only through compositional change caused by resputtering. It is likely that the different behaviors between two cases are due to the fact that Tb is anisotropic and Gd is isotropic atom. However, its mechanism is not clear.
  • Keywords
    Amorphous magnetic films/devices; Magnetooptic memories; Perpendicular magnetic anisotropy; Amorphous materials; Anisotropic magnetoresistance; Argon; Atomic layer deposition; Current density; Ion beams; Magnetic films; Perpendicular magnetic anisotropy; Sputtering; Substrates;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1064077
  • Filename
    1064077