DocumentCode
1013347
Title
Perpendicular anisotropy in rare earth-transition metal amorphous films prepared by dual ion beam sputtering
Author
Okamine, S. ; Ohta, N. ; Sugita, Y.
Author_Institution
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume
21
Issue
5
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1641
Lastpage
1643
Abstract
The effect of resputtering on perpendicular magnetic anisotropy has been investigated for amorphous Gd-Co, Gd-Fe, Tb-Co and Tb-Fe films using a dual ion beam sputtering system. In Tb-Co and Tb-Fe films, perpendicular anisotropy increases remarkably owing to resputtering, while in Gd-Co and Gd-Fe films, it changes only through compositional change caused by resputtering. It is likely that the different behaviors between two cases are due to the fact that Tb is anisotropic and Gd is isotropic atom. However, its mechanism is not clear.
Keywords
Amorphous magnetic films/devices; Magnetooptic memories; Perpendicular magnetic anisotropy; Amorphous materials; Anisotropic magnetoresistance; Argon; Atomic layer deposition; Current density; Ion beams; Magnetic films; Perpendicular magnetic anisotropy; Sputtering; Substrates;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1064077
Filename
1064077
Link To Document