Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

Author

Pei, Y. ; Recht, F. ; Fichtenbaum, N. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Univ. of California, Santa Barbara

Volume

Issue

fYear

2007

Firstpage

1466

Lastpage

1467

Abstract

Silicon ions were implanted to source-drain regions to achieve a non- alloyed ohmic contact resistance as low as 0.2 Omegaldrmm. Based on this technology, T-shaped deep submicron HEMTs were fabricated. An extrinsic f_T of 92 GHz and an extrinsic f_max of 148 GHz have been measured in a passivated 0.15 x 150 mum device. Power measurements at 10 GHz showed 70.7% power-added-efficiency and 4.1 W/mm power density at 20 V drain bias.

Keywords

III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; ion implantation; millimetre wave field effect transistors; ohmic contacts; wide band gap semiconductors; AlGaN-GaN; deep submicron HEMT; frequency 10 GHz; frequency 148 GHz; frequency 92 GHz; high electron mobility transistors; ion implanted source-drain regions; nonalloyed ohmic contact resistance; nonalloyed ohmic contacts; power density; power measurements; power-added-efficiency; silicon ions; voltage 20 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20072969

Filename

4405627

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013351