Epitaxial lift-off GaAs HEMT´s

Author

Shah, Divyang M. ; Chan, Winston K. ; Caneau, Catherine ; Gmitter, Thomas J. ; Song, Jong-In ; Hong, Brian P. ; Micelli, Paul F. ; De Rosa, F.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

42

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

1877

Lastpage

1881

Abstract

An extensive study of epitaxial lift-off (ELO) Al_0.3Ga _0.7As/GaAs modulation doped heterostructure high electron mobility field-effect transistors (HEMT´s) is presented. Effects of ELO on electron transport properties of two-dimensional electron gas at AlGaAs/GaAs interface are investigated. An ELO HEMT with 1.5 μm gate length had a maximum extrinsic transconductance g_m-max=125 mS/mm, a unity current gain cut-off frequency f_t=10.5 GHz, and a maximum frequency of oscillation f_max=12 GHz. Statistical distributions of maximum intrinsic transconductance of ELO HEMT´s are presented and compared with their on-wafer counterparts. Stability of the ELO HEMT´s has also been evaluated by continuous operation at room temperature under dc bias

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor epitaxial layers; semiconductor technology; 1.5 micron; 10.5 to 12 GHz; Al_0.3Ga_0.7As-GaAs; ELO HEMT; electron transport; epitaxial lift-off; maximum frequency of oscillation; modulation doped heterostructure field-effect transistors; stability; transconductance; two-dimensional electron gas; unity current gain cut-off frequency; Cutoff frequency; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Stability; Statistical distributions; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.469391

Filename

469391