• DocumentCode
    1014280
  • Title

    The nesistor—A semiconductor negative resistance device

  • Author

    Pohl, Robert G.

  • Author_Institution
    Illinois Institute of Technology, Chicago, Ill.
  • Volume
    6
  • Issue
    3
  • fYear
    1959
  • fDate
    7/1/1959 12:00:00 AM
  • Firstpage
    278
  • Lastpage
    287
  • Abstract
    A semiconductor device similar in principle to the injecting-drain-field-effect transistor, having wide ranges of controllable negative resistance which can be used in counting, flip-flop, amplifying, and oscillator circuits, is described. The negative resistance arises from the modulation of the current between two ohmic contacts of circular symmetry, on a flat semiconductor wafer, by the effect of the collection of minority carriers on the pinching potential of a collector electrode. Families of negative resistance, of either the shunt or series type, are obtainable depending upon the mode of operation. Power gains of 60 and thermal dissipation of 1/4 watt have been achieved in liquid cooled units the size of high-frequency transistors. An improved sandwich-type base tab for mounting semiconductor wafers is shown. A theoretical analysis of the operation of the device permits prediction of the effect of various physical parameters upon the static electrical characteristics.
  • Keywords
    Circuits; Conductivity; Contact resistance; Electric variables; Electrodes; FETs; Germanium; Germanium alloys; Ohmic contacts; Oscillators; Semiconductor devices; Tin; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1959.14548
  • Filename
    1472591