Characterization of the broadband transmission behavior of interconnections on silicon substrates

Author

Zaage, Stefan ; Grotelüschen, Enno

Author_Institution

Lab. fur Informationstech., Hannover Univ., Germany

Volume

16

Issue

7

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

686

Lastpage

691

Abstract

In this paper some characteristics of the transmission behavior of interconnections on conductive silicon substrates are presented. With regard to the signal propagation in high-speed digital circuits, the broadband behavior of the lines is of special interest. The characteristic impedance Z_C and the propagation constant γ of the lines are determined experimentally by microwave measurements. The influence of the line geometry, the substrate resistivity, and the signal frequency on the transmission behavior are clarified. Based on the results of these measurements, the suitability of the conventional RLC line model for time-domain simulations of the transmission characteristics of interconnections on silicon substrates is clarified

Keywords

VLSI; digital integrated circuits; electric impedance; microstrip lines; multichip modules; packaging; silicon; substrates; transmission line theory; RLC line model; Si; Si substrate; broadband transmission behavior; characteristic impedance; characterization; conductive substrates; high-speed digital circuits; interconnections; line geometry; microwave measurements; propagation constant; signal frequency; signal propagation; substrate resistivity; time-domain simulations; Conductivity; Digital circuits; Frequency; Geometry; Impedance measurement; Integrated circuit interconnections; Microwave measurements; Microwave propagation; Propagation constant; Silicon;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.257866

Filename

257866