New method for potential well measurements using bubble runout in ion-implanted bubble devices

A new potential well measurement method has been developed by the use of bubble runout phenomena around bubble propagation patterns. The new method reveals not only bubble potential well distributions but also magnetization distributions around the propagation patterns by observing a domain extension direction after bubble runout. The method has been applied to an ion-implanted bubble device for 1-μm bubbles and has verified the role of stress relief anisotropy for magnetic charge distributions along nonimplanted pattern edges.