Carrier Transport Mechanism in a Nanoparticle-Incorporated Organic Bistable Memory Device

Author

Lin, Heng-Tien ; Pei, Zingway ; Chan, Yi-Jen

Author_Institution

Ind. Technol. Res. Inst., Hsinchu

Volume

28

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

569

Lastpage

571

Abstract

In this letter, the conduction mechanism in nanoparticle-contained polymer memory was investigated experimentally and theoretically. The current-voltage characteristics showed that the device switches from an initial low-conductivity state to a high-conductivity state upon application of an external electric field at room temperature. The current transition exhibited a very narrow voltage range that causes an abrupt increase of current. A trap-filled space-charge-limited current model was proposed and supported by the experimental data to explain the transport mechanism in organic memory.

Keywords

semiconductor devices; semiconductor storage; space-charge limited devices; carrier transport mechanism; conduction mechanism; conductivity state; current transition; current-voltage characteristics; device switches; external electric field; organic bistable memory device; polymer memory; space-charge-limited current model; Charge transfer; Dielectric materials; Glass; Gold; Nanomaterials; Nanoparticles; Nanoscale devices; Organic light emitting diodes; Organic materials; Voltage; Mechanism; organic memory; space-charge-limited current (SCLC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.899668

Filename

4252208