Effects of drive current upon defect distribution scan features in multi-longitudinal mode semiconductor lasers

Author

DeChiaro, L.F. ; Robinet, M. ; Devoldere, P.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

11

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2057

Lastpage

2065

Abstract

Defect distribution (D²) scans calculated from semiconductor lasers at several values of drive current exhibit peaks associated with internal defects. The peak heights vary linearly with drive current in the regime far below threshold. Near threshold, the heights exhibit a sharp maximum at a critical current and decline at larger currents. The critical current is approximately equal to threshold for defects in the cavity interior, and less than threshold for defects located near one of the facets. A rate equation model accounts for this behavior and predicts values of drive current to obtain optimum peak height and optimum spatial resolution on internal gain anomalies

Keywords

laser modes; laser variables measurement; optical testing; reliability; semiconductor device testing; semiconductor lasers; cavity interior; critical current; defect distribution scan features; drive current; facets; far below threshold; internal defects; internal gain anomalies; larger currents; multi-longitudinal mode semiconductor lasers; near threshold; optimum peak height; optimum spatial resolution; peak heights; rate equation model; Critical current; Drives; Electrostatic discharge; Equations; Gas lasers; Laser modes; Laser theory; Semiconductor lasers; Spectral shape; Voltage;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.257970

Filename

257970