• DocumentCode
    1016954
  • Title

    Transition region properties of reverse-biased diffused p-n junctions

  • Author

    Cohen, Jerrold

  • Author_Institution
    Hughes Products, Newport Beach, Calif.
  • Volume
    8
  • Issue
    5
  • fYear
    1961
  • Firstpage
    362
  • Lastpage
    369
  • Abstract
    Poisson´s equation is solved for two common types of diffused p-n junctions in a manner similar to that of previous authors. By a suitable transformation, the field in the junction and capacitance-voltage relation for all junctions are shown to be presentable as a single family of curves with no approximation other than the assumption of negligible drift field. The abrupt and graded regions are discussed in detail. The zero-bias potential and capacitance are also discussed.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Cities and towns; Doping; Electron devices; Gaussian distribution; Impurities; Neodymium; P-n junctions; Permittivity; Poisson equations; Semiconductor diodes; Semiconductor impurities; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1961.14813
  • Filename
    1472976