DocumentCode
1016954
Title
Transition region properties of reverse-biased diffused p-n junctions
Author
Cohen, Jerrold
Author_Institution
Hughes Products, Newport Beach, Calif.
Volume
8
Issue
5
fYear
1961
Firstpage
362
Lastpage
369
Abstract
Poisson´s equation is solved for two common types of diffused p-n junctions in a manner similar to that of previous authors. By a suitable transformation, the field in the junction and capacitance-voltage relation for all junctions are shown to be presentable as a single family of curves with no approximation other than the assumption of negligible drift field. The abrupt and graded regions are discussed in detail. The zero-bias potential and capacitance are also discussed.
Keywords
Capacitance; Capacitance-voltage characteristics; Cities and towns; Doping; Electron devices; Gaussian distribution; Impurities; Neodymium; P-n junctions; Permittivity; Poisson equations; Semiconductor diodes; Semiconductor impurities; Zinc;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1961.14813
Filename
1472976
Link To Document