• DocumentCode
    1016973
  • Title

    A treatment of diffusion errors affecting junction depth

  • Author

    Reynolds, J.E.

  • Author_Institution
    Motorola Inc., Phoenix, Ariz.
  • Volume
    8
  • Issue
    5
  • fYear
    1961
  • Firstpage
    377
  • Lastpage
    381
  • Abstract
    An error treatment of the diffusion variables of time t, temperature T, and starting resistivity ρ, has been made in regard to their effects upon junction depth. An analytical equation has been derived for engineering usage in determining the per cent error in junction depth x : Per cent error in junction depth = 100 \\sqrt {frac{\\bar{\\Delta t^{2}}{2t}} +frac{\\bar{Q\\Delta T}^{2}}{2RT^{2}}+\\bar{frac{\\sqrt {\\pi DT}}{\\\\muq p^{2}N_{s}x}. \\Delta \\rho \\exp (x^{2}/4Dt)}} A sample calculation using the above equation is presented along with a method of estimating errors in junction depth due to heating and cooling in the diffusion cycle.
  • Keywords
    Boundary conditions; Chemical analysis; Chemical industry; Conducting materials; Conductivity; Contamination; Diffusion processes; Equations; Error correction; P-n junctions; Semiconductor device manufacture; Solid state circuits; Temperature; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1961.14815
  • Filename
    1472978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1016973