DocumentCode
1017378
Title
Gain expansion and intermodulation in a m.e.s.f.e.t. amplifier
Author
Blanco, Cristian
Author_Institution
ETSI de Telecomunicacion, Laboratorio de Microondas, Madrid, Spain
Volume
15
Issue
1
fYear
1979
Firstpage
31
Lastpage
32
Abstract
A simple way of biasing and tuning an X-band m.e.s.f.e.t. for gain expansion is presented. The measured gain and phase of an experimental amplifier make possible a prediction of the third-order intermodulation using a simple power series. The calculated and measured intermodulation are in agreement with each other.
Keywords
Schottky gate field effect transistors; intermodulation; microwave amplifiers; solid-state microwave circuits; tuning; MESFET amplifiers; X-band; biasing; gain expansion; intermodulation; microwave amplifiers; tuning;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790023
Filename
4255986
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