Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements

Author

Bethoux, Jean-Marc ; Happy, Henri ; Siligaris, Alexandre ; Dambrine, Gilles ; Borghetti, J. ; Derycke, Vincent ; Bourgoin, Jean-Philippe

Author_Institution

CNRS UMR, Villeneuve d´´Ascq

Volume

5

Issue

4

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

335

Lastpage

342

Abstract

AC performances of carbon nanotube field-effect transistors (CNT-FETs) are analyzed by means of scattering parameters measurements. The active ac properties of CNT-FETs are clearly demonstrated up to 80 MHz and indications of active behavior are obtained up to 1 GHz. From these measurements, a small signal equivalent circuit is proposed and validated up to 10 MHz. The extraction procedure and the determination of the intrinsic ac elements of CNT-FETs are pointed out

Keywords

carbon nanotubes; elemental semiconductors; equivalent circuits; field effect transistors; semiconductor device models; C; carbon nanotube field-effect transistors; device modeling; microwave measurement; scattering parameter measurements; signal equivalent circuit; CNTFETs; Carbon nanotubes; FETs; Hafnium; Microwave measurements; Nanolithography; Pulse measurements; Scattering parameters; Self-assembly; Silicon; Carbon nanotube field-effect transistor (CNT-FET); device modeling; microwave measurement;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.876931

Filename

1652848