• DocumentCode
    1017740
  • Title

    Simple model of large-signal properties of 1 W f.e.t. at 5 GHz

  • Author

    Kotzebue, K.L. ; Ehlers, E.R.

  • Author_Institution
    University of California, Department of Electrical & Computer Engineering, Santa Barbara, USA
  • Volume
    15
  • Issue
    8
  • fYear
    1979
  • Firstpage
    237
  • Lastpage
    238
  • Abstract
    Extensive large-signal measurements performed on a 1 W microwave f.e.t. at 5 GHz verify that its added-power characteristics can be accurately predicted from a simple analytic model requiring only two large-signal measurements for each frequency of interest. This model makes possible the use of linear circuit theory to design broadband matching circuits for optimum added-power performance.
  • Keywords
    field effect transistors; power transistors; semiconductor device models; solid-state microwave devices; 1 W; 5 GHz; FET; added power characteristics; large scale properties; microwave; semiconductor device models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790168
  • Filename
    4256019