DocumentCode
1017801
Title
The tunneling P-N junction
Author
Longini, Richard L.
Author_Institution
Westinghouse Research Laboratories, Pittsburgh, Pa.
Volume
9
Issue
1
fYear
1962
Firstpage
88
Lastpage
93
Abstract
The tunneling probability in an Esaki diode is very much dependent on the electric field strength which is itself dependent on the local fluctuations of ion concentration. The fluctuation of depletion layer thickness due to randomness of ion position is calculated. It is shown that most of the tunneling current is carried by only a small fraction of the total area.
Keywords
Diodes; Electron devices; Fluctuations; Helium; Impurities; Laboratories; Microscopy; P-n junctions; Probability distribution; Shape; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1962.14894
Filename
1473122
Link To Document