Comment on "On the speed and noise performance of direct ion-implanted GaAs MESFET\´s" [with reply]

Author

Moll, N. ; Feng, Ming ; Laskar, J.

Author_Institution

Hewlett-Packard Co., Palo Alto, CA, USA

Volume

41

Issue

1

fYear

1994

Firstpage

115

Lastpage

118

Abstract

Moll comments on the original paper (see ibid., vol.40, pp. 9-17, 1993), stating that the large values of /spl nu//sub Feng/ are an artifact of an incorrect analysis and do not represent any physical velocity in the transistor. Most probably, a careful analysis of data for their typical transistors would lead to the notion that the electron velocity is on the order of 1.6 10/sup 7/ cm/s at the drain end of the gated channel. In reply, Feng and Laskar probe the current issues regarding these equations and seek to clarify and validate the equations with 1) The question of velocity overshoot or enhancement in the GaAs channel of HEMT´s and MESFET´s and its impact upon high speed operation and 2) The delay time analysis technique applied to average velocity extraction.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; ion implantation; semiconductor device noise; GaAs; HEMT; average velocity extraction; delay time analysis; direct ion-implanted GaAs MESFET; drain end; electron velocity; gated channel; high speed operation; noise performance; physical velocity; speed; velocity enhancement; velocity overshoot; Bandwidth; Contacts; Delay effects; Electrons; Error correction; FETs; Gallium arsenide; MESFETs; Performance analysis; Semiconductor device noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.259629

Filename

259629