Resonant interband tunneling device with multiple negative differential resistance regions

Author

Beresford, R. ; Luo, L.F. ; Longenbach, K.F. ; Wang, Wen I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

11

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

110

Lastpage

112

Abstract

The first observations of multiple negative differential resistance (NDR) regions in resonant interband tunneling devices are reported. In vertically integrated poly-type heterostructures of InAs/AlSb/GaSb, the peak voltages are reduced by a factor of 2 compared to the AlInAs/GaInAs material system, while high peak-to-valley ratios of 4:1 (17:1) at 300 K (77 K) are maintained. The InAs/AlSb/GaSb material system offers advantages for circuit applications of such devices, particularly operation at lower voltages.<>

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; hot electron transistors; indium compounds; negative resistance; tunnelling; 300 K; InAs-AlSb-GaSb; circuit applications; multiple negative differential resistance regions; peak-to-valley ratios; resonant interband tunneling devices; vertically integrated poly-type heterostructures; Circuit synthesis; Current-voltage characteristics; FETs; Fabrication; Gallium arsenide; Logic devices; Multivalued logic; Resonance; Resonant tunneling devices; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46950

Filename

46950