• DocumentCode
    1018227
  • Title

    Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors

  • Author

    Jayant Baliga, B.

  • Author_Institution
    General Electric Company, Corporate Research and Development Center, Schenectady, USA
  • Volume
    15
  • Issue
    20
  • fYear
    1979
  • Firstpage
    645
  • Lastpage
    647
  • Abstract
    A new gate structure is described for power thyristors which uses the m.o.s. field effect to control the anode breakover voltage. Experimental devices have been fabricated using a V-groove etched in (100) oriented wafers and forming the gate in these grooves. Both enhancement- and depletion-mode devices have been demonstrated.
  • Keywords
    metal-insulator-semiconductor devices; thyristors; MOS depletion mode thyristor; MOS enhancement mode thyristor; V groove; anode breakover voltage; gate structure; power thyristors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790459
  • Filename
    4256076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018227