Reduction of kink effect in short-channel MOS transistors

A simple analysis of the kink effect in MOS transistors is proposed. This analysis enables a quantitative description of the excess drain current as a function of channel length to be obtained both at room and liquid-helium temperatures. More specifically, it is demonstrated that a reduction of the normalized kink effect Delta I/sub d//I/sub d/ /sub sat/ in short-channel MOS transistors arises from the combined effects of charge sharing and saturation velocity through the lowering of the depletion capacitance and the normalized saturation transconductance.<>