• DocumentCode
    1018237
  • Title

    Automatic electrochemical profiling of carrier concentration in indium phosphide

  • Author

    Ambridge, T. ; Ashen, D.J.

  • Author_Institution
    Post Office Research Centre, Ipswich, UK
  • Volume
    15
  • Issue
    20
  • fYear
    1979
  • Firstpage
    647
  • Lastpage
    648
  • Abstract
    The technique of carrier concentration profiling over a wide doping and depth range, via automatic C/V analysis and disolution at an electrolytic Schottky barrier, is here demonstrated for indium phosphide
  • Keywords
    III-VI semiconductors; carrier density; indium compounds; semiconductor-electrolyte boundaries; InP; anodic dissolution; automatic capacitance voltage measurements; doping; electrochemical carrier concentration profiling; electrolytic Schottky barrier; semiconductor electrolyte boundaries;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790460
  • Filename
    4256077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018237