• DocumentCode
    1018605
  • Title

    Comparison of GaAs IMPATT designs for 20 GHz

  • Author

    Berenz, J.J. ; Vichr, M. ; Fank, F.B.

  • Author_Institution
    Varian Associates, Palo Alto, USA
  • Volume
    15
  • Issue
    21
  • fYear
    1979
  • Firstpage
    694
  • Lastpage
    695
  • Abstract
    GaAs IMPATT diodes have been developed to deliver high c.w. powers in K-band. Single-drift and double-drift flat profile and single-drift Read profile designs have been evaluated. The highest conversion efficiencies were obtained with the high/low Read doping profile. A maximum c.w. power of 3.1 W has been measured at 19.6 GHz with 18.6% efficiency for these devices.
  • Keywords
    III-V semiconductors; IMPATT diodes; gallium arsenide; 20 GHz; CW powers; GaAs IMPATT diodes; K-band; continuous wave powers; conversion efficiencies; double drift flat profile; high Read doping profile; low Read doping profile; single drift Read profile; single drift flat profile;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790494
  • Filename
    4256114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018605