• DocumentCode
    1019086
  • Title

    Narrow-beam high-power twin-channel laser with reduced sidelobes

  • Author

    Morrison, G.B. ; Zinkiewicz, L.M. ; Burghard, A. ; Figueroa, L.

  • Author_Institution
    TRW, Inc., Electro Optics Research Center, Redondo Beach, USA
  • Volume
    22
  • Issue
    1
  • fYear
    1986
  • Firstpage
    8
  • Lastpage
    9
  • Abstract
    We present a version of the twin-channel laser with reduced dimensions. This version has improved yields of high-power lasers (Pmax ~ 120 mW at 50% duty cycle) with single-lobe far-field distributions. These far-field patterns exhibit almost no sidelobes, a fact that can be explained by the reduced dimensions.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAs-AlGaAs laser; high-power lasers; reduced sidelobes; semiconductor laser; single-lobe far-field distributions; twin-channel laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860006
  • Filename
    4256164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019086