DocumentCode
1019610
Title
High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy
Author
Larsson, A. ; Mittelstein, M. ; Arakawa, Yasuhiko ; Yariv, Amnon
Author_Institution
California Institute of Technology, Department of Applied Physics, Pasadena, USA
Volume
22
Issue
2
fYear
1986
Firstpage
79
Lastpage
81
Abstract
Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79% and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8° (1.9 times diffraction limit) for a 100 ¿m-wide laser were obtained under pulsed conditions.
Keywords
molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; beam divergence; diffraction limit; external quantum efficiency; graded-index waveguide separate-confinement heterostructure lasers; high-efficiency broad-area single-quantum-well lasers; molecular beam epitaxy; semiconductor laser; single-lobed far-field patterns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860054
Filename
4256229
Link To Document