Effects of dopants on disordering of AlGaAs-GaAs superlattice by zinc diffusion

Author

Wu, Yao-Hwa ; Werner, Michael ; Wang, Shuhui ; Flood, J. ; Merz, J.L.

Author_Institution

University of California, Department of Electrical Engineering & Computer Sciences, and Electronics Research Laboratory, Berkeley, USA

Volume

22

Issue

2

fYear

1986

Firstpage

115

Lastpage

116

Abstract

Low-temperature photoluminescence and SEM are used to study the effects of annealing and Zn-diffusion on the doped Al0.3Ga0.7As-GaAs superlattices grown by molecular beam epitaxy. It is found that annealing has little effect on the Al-Ga interdiffusion. The photoluminescence spectra from both an unannealed and a Zn-diffused superlattice doped with Be and Sn in the wells and barriers, respectively, show peaks from the GaAs wells and the Al0.3Ga0.7As barriers. The SEM picture also shows that the superlattice remains intact with Zn-diffusion.

Keywords

III-V semiconductors; aluminium compounds; annealing; diffusion in solids; gallium arsenide; interface structure; luminescence of inorganic solids; photoluminescence; scanning electron microscope examination of materials; semiconductor doping; semiconductor epitaxial layers; semiconductor superlattices; AlGaAs-GaAs superlattice; Be doping; III-V semiconductor; SEM; Sn doping; Zn diffusion; annealing; disordering; dopants; interdiffusion; molecular beam epitaxy; photoluminescence; quantum wells;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19860081

Filename

4256262